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The chemical and electronic surface structure of 20%-efficient Cu(In,Ga)Se2 thin film solar cell absorbers was investigated as a function of deposition process termination (i.e., ending the growth process in absence of either Ga or In). In addition to the expected In (Ga) enrichment, direct and inverse photoemission reveal a decreased Cu surface content and a larger surface band gap for the “In-terminated” absorber.
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Bär et al. (2009) studied this question.
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