Ultra-Shallow Junction Formation by Monolayer Doping Process in Single Crystalline Si and Ge for Future CMOS Devices

Ultra-Shallow Junction Formation by Monolayer Doping Process in Single Crystalline Si and Ge for Future CMOS Devices, Chuang, Shang-Shiun, Cho, Ta-Chun, Sung, Po-Jung, Kao, Kuo-Hsing, Chen, Henry J. H., Lee, Yao-Jen, Current, Michael I., Tseng, Tseung-Yuen