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Rutherford backscattering of 2-MeV He+ with channeling was used to study damage distributions in Al x Ga1-x As and GaAs/Al x Ga1-x As superlattices induced by Si implantation. Various samples were prepared with different implantation doses and energies, AlAs composition x, periodicity of superlattices, and annealing temperature. We obtained the following results: (1) the amount of damage in AlGaAs is about one tenth of that in GaAs or AlAs, (2) GaAs layers are preferentially damaged in superlattice structures independent of the Al composition in Al x Ga1-x As and (3) implantation-induced damage disappears almost completely after annealing at 800°C for 15 min.
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Matsui et al. (1987) studied this question.
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