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October 1, 1983Japanese Journal of Applied Physics

Focused Si Ion Implantation in GaAs

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Authors

YBYasuo BambaCanon (Japan)EMEizo MiyauchiFujitsu (Japan)HAHiroshi ArimotoNational Institute of Advanced Industrial Science and Technology

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Cite This Study

Bamba et al. (1983) studied this question.

synapsesocial.com/papers/6a6fbea331a3df824328121ahttps://doi.org/10.1143/jjap.22.l650
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1A 100 kV Maskless Ion-Implantation System with an Au–Si–Be Liquid Metal Ion Source for III-V Compound Semiconductors1983 · 28 citations
  2. 2Lateral Spreads of Be and Si in GaAs Implanted with a Maskless Ion Implantation System1983 · 17 citations
  3. 3High current density Ga+ implantations into Si1979 · 21 citations
  4. 4Bound-Exciton, Free-Exciton, Band-Acceptor, Donor-Acceptor, and Auger Recombination in GaAs1968 · 249 citations
  5. 5Raman spectra from Si and Sn implanted GaAs1982 · 72 citations