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May 1, 1983Japanese Journal of Applied PhysicsOpen Access

A 100 kV Maskless Ion-Implantation System with an Au–Si–Be Liquid Metal Ion Source for III-V Compound Semiconductors

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Authors

EMEizo MiyauchiFujitsu (Japan)HAHiroshi ArimotoNational Institute of Advanced Industrial Science and TechnologyHHHisao HashimotoFujitsu (Japan)

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Miyauchi et al. (1983) studied this question.

synapsesocial.com/papers/6a95b1e454b0eb02e36287c6https://doi.org/10.1143/jjap.22.l287
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Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1A mass-separating focused-ion-beam system for maskless ion implantation1981 · 87 citations
  2. 2FET fabrication using maskless ion implantation1981 · 76 citations
  3. 3Au–Si–Be Liquid Metal Ion Source for Maskless Ion Implantation1983 · 29 citations
  4. 4Field-emission liquid-metal ion source and triode ion gun1981 · 12 citations