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July 1, 1983Japanese Journal of Applied Physics

Lateral Spreads of Be and Si in GaAs Implanted with a Maskless Ion Implantation System

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Authors

EMEizo MiyauchiFujitsu (Japan)HAHiroshi ArimotoNational Institute of Advanced Industrial Science and TechnologyYBYasuo BambaCanon (Japan)

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Miyauchi et al. (1983) studied this question.

synapsesocial.com/papers/6a95b1e454b0eb02e36287c5https://doi.org/10.1143/jjap.22.l423
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Monte Carlo simulation of depth and lateral profiles of boron atoms implanted in polycrystalline silicon1977 · 11 citations
  2. 2Theoretical Considerations in Lateral Damage Distribution Formed by Ion-Implantation1975 · 21 citations
  3. 3Theoretical Considerations on Lateral Spread of Implanted Ions1972 · 205 citations
  4. 4A 100 kV Maskless Ion-Implantation System with an Au–Si–Be Liquid Metal Ion Source for III-V Compound Semiconductors1983 · 28 citations
  5. 5FET fabrication using maskless ion implantation1981 · 76 citations