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April 1, 1977Journal of Applied Physics

Monte Carlo simulation of depth and lateral profiles of boron atoms implanted in polycrystalline silicon

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RSRyuichi ShimizuCentral Research Institute of Electric Power IndustrySKSuk Tai KangKorea Research Institute of Standards and ScienceTKT. KoshikawaOsaka Electro-Communication University

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Shimizu et al. (1977) studied this question.

synapsesocial.com/papers/6a89aa78176d2ac34cfbaf83https://doi.org/10.1063/1.323821
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