Thermal Conductive Properties of a Semiconductor Laser on a Polymer Interposer

We have calculated the thermal conductive properties and rate of temperature increase of a semiconductor laser on a polymer substrate. The temperature rises to 27 °C on the polymer interposer and the heat radiation effect is almost saturated in the case where the Au film has a thickness of 500 nm at 10 mW. Also, we have fabricated a 1.3 µm quantum dot (QD) laser with a stripe structure for the polymer interposer. We can achieve a low operating current threshold of 7 mA for the QD laser with a high mirror loss of 16 cm-1 at 1.3 µm emission because of the high quality of the QDs and the low scattering loss structure. Moreover, we have measured the heat distribution and rising temperature speed of a QD laser on a polymer substrate. These results indicate that we need to realize a high-efficiency laser source to achieve high transmission speeds in the future.