The incorporation of plasma-generated monatomic hydrogen into a wide-band-gap II-VI zincblende semiconductor (e.g. ZnSe) has been achieved by using a deposited layer of silicon dioxide as a hydrogen-permeable encapsulation to prevent decomposition (etching) of the semiconductor during hydrogenation. Depth profiles from secondary-ion mass spectrometry demonstrate deuterium penetration into ZnSe layers epitaxially grown on GaAs. Low-temperature photoluminescence reveals that the commonly observed donor-acceptor pair transitions are selectively removed by hydrogenation.
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Pong et al. (1992) studied this question.
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