Physical modeling of the reverse-short-channel effect for circuit simulation

The proposed threshold-voltage (V/sub th/) model for circuit simulation includes reverse-short-channel effects (RSCE) and short-channel effects (SCE) based on their respective physical origins. A linear vertical-impurity profile approximation for simplified RSCE-modeling already enables 8 mV average V/sub th/-accuracy (max<45 mV) under all bias conditions for source, drain, and bulk for L/sub gate/ down to 0.15 /spl mu/m. The complete V/sub th/-model needs only ten constant L/sub gate/-independent parameters.