In0.2Ga0.8As/GaAs strained layer superlattices were grown by molecular-beam epitaxy with various GaAs barrier thicknesses to study how this affects the properties of nominally 90-Å-thick InGaAs wells. Double-crystal x-ray diffraction, photoconductivity, and photoluminescence gave similar results regarding superlattice degradation with decreasing barrier thickness. The optical measurements showed that at 58-Å-GaAs thickness, the strained layer superlattice was relaxed with concomitant deterioration of its optical properties.
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Hovinen et al. (1991) studied this question.
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