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October 16, 1989Applied Physics Letters

I n s i t u measurements of critical layer thickness and optical studies of InGaAs quantum wells grown on GaAs substrates

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Authors

BEB. ElmanHarvard UniversityEKEmil S. KötelesBoston Sports & Shoulder CenterPMP. MelmanBoston University

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Elman et al. (1989) studied this question.

synapsesocial.com/papers/6a9127ab2d14ef2b6ea15047https://doi.org/10.1063/1.102279
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Observation of compressive and tensile strains in InGaAs/GaAs by photoluminescence spectroscopy1988 · 30 citations
  2. 2Surface Lattice Strain Relaxation at the Initial Stage of Heteroepitaxial Growth of In<sub>x</sub>Ga<sub>1-x</sub>As on GaAs by Molecular Beam Epitaxy1989 · 55 citations
  3. 3Growth and characterization of (111) oriented GaInAs/GaAs strained-layer superlattices1989 · 25 citations
  4. 4Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum wells by photoluminescence and transmission electron microscopy1989 · 51 citations
  5. 5Optical Properties of (100) - and (111)-Oriented GaInAs/GaAs Strained-Layer Superlattices1989 · 110 citations