The transmission of far-infrared radiation of 100-{μ}m wavelength through Ge wafers ion implanted with B was measured at a temperature of approximately 4 K. Transmittance ranged from approximately 0.5 to 0.08 for doses from 3×{}10¹² to 3×{}10¹⁵ cm^-2. The resistivity at temperatures between 4 and 1 K, and the impurity profiles of the implanted layers were also measured and correlated with the infrared transmittance.
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Hádek et al. (1985) studied this question.
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