Electron energy distributions, transport parameters, and rate coefficients in GaAs

This is the authors' abstract. We don't add key points for this paper.

Monte Carlo methods have been used to obtain the electron energy distributions, transport parameters, and rate coefficients for electrons in a three-valley model of GaAs with nonparabolic energy bands in the presence of an external electric field. A technique has been developed which reduces the computation time when using self-scattering algorithm. Consequently, for a given computation time, more test particles can be used in the simulation. This results in a reduction in the fluctuation of the calculated quantities. In this paper, the Monte Carlo technique is presented for two generic time variations of the applied field: (a) dc and (b) a step change. The results shown are for the steady-state behavior of electrons in GaAs, for dc electric fields with values up to 70 kV/cm.