V-pit-induced electric field redistribution enabling efficient hole injection in InGaN-based red light-emitting diodes grown on silicon

InGaN-based micro-light-emitting diodes (micro-LEDs) have been widely recognized as one of the critical technologies for high-resolution display applications. However, achieving high-efficiency, environmental-friendly, and small-size self-emitting InGaN-based red micro-LEDs present significant challenges that impede the progress of monolithically integrated III-nitride full-color micro-LED displays. Current limitations stem from insufficient control over carrier dynamics in InGaN multiple quantum wells (MQWs), where conventional structures exhibit severe efficiency degradation due to insufficient hole injection and defect-induced nonradiative recombination. Herein, spatially-resolved in-situ hyperspectral imaging and numerical simulations demonstrate that optimized V-pit promote the effectiveness of three-dimensional current pathways and facilitate localized electric field redistribution. This improvement enhances hole injection while suppressing nonradiative recombination, this work contributes to the microstructure design in InGaN-based red LEDs.