Energy transfer of bound excitons in GaP: N is investigated by time-resolved, resonant-excitation spectroscopy and by studies of below-band-gap excitation spectra. Exciton tunneling is found to dominate over dipole-dipole interactions because of the large spatial extent of the exciton wave function. This is the first definitive observation of exciton tunneling in a semiconductor.
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Wiesner et al. (1975) studied this question.
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