A new model for the diffusion of impurities in amorphous silicon that takes into account the structural and electronic properties of the material is proposed. This model is based on the kinetic many-body theory of thermally activated rate processes in solids. The observed small activation energy and pre-exponential factors for the diffusion of impurities in a-Si are explained as well as their dependence on impurity concentration.
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Khait et al. (1988) studied this question.
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