Nb-doped (101)-oriented SnO 2 (SnO 2 :Nb) thin films were fabricated through postdeposition thermal annealing of (001)-oriented Nb-doped SnO films grown on glass substrates using pulsed laser deposition. Nb doping resulted in an anisotropic lattice deformation explained by Nb in Sn site. Resistivity, electron concentration, and mobility values of 3.7×10 -3 Ω cm, 6.5×10 19 cm -3 , and 26 cm V -1 s -1 , respectively, were achieved in the films at room temperature for a dopant concentration of 1 at. %. The optical band gap increased from 3.9 to 4.1 eV with Nb doping ≥1 at. %.
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Suzuki et al. (2012) studied this question.
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