Oxygen Doping Effects on Super-resolution Scattering-mode Near-field Optical Data Storage

Silver oxide (AgO x ) was recently proposed as a new mask material to realize a scattering-mode super-resolution near-field structure (Super-RENS). To obtain a further understanding of the influence of the Ge2Sb2Te5 recording layer on the characteristics of scattering-mode Super-RENS, oxygen (O2)-doped GeSbTe films are examined in this study. The crystallization temperature T c of the GeSbTe–(O) films increased with the O2 flow ratio and was improved to 200°C at the O2 flow ratio of 0.1. It was found that light O2 doping could improve the super-resolution to 80 nm and the readout durability against readout cycles in the scattering-mode Super-RENS could be greatly improved by light and heavy O2 doping into GeSbTe films.