In this article, the problem of modeling the thermal properties of the IGBT using a nonlinear compact thermal model is considered. This model has the form of an electrical network. In the proposed model, the influence of the internal temperature of this transistor on the efficiency of heat dissipation is taken into account. The elaborated model form is presented and the estimation method of this model parameters is described. The correctness of the new model is verified experimentally for different cooling conditions and different values of ambient temperature. Additionally, some results of calculations are compared to the results of calculations performed using selected models given in the literature.
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Górecki et al. (2020) studied this question.
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