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March 16, 2004Journal of Applied Physics

Effects of substrate temperature on the device properties of pentacene-based thin film transistors using Al2O3+x gate dielectric

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Authors

JLJiyoul LeeSt. Mary's HospitalJKJ. H. KimSISeongil ImYonsei University

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Lee et al. (2004) studied this question.

synapsesocial.com/papers/6a97db875a0f36424c366eabhttps://doi.org/10.1063/1.1650886
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