Emission of MCs + secondary ions from semiconductors by caesium bombardment

The emission of MCs + molecular ions sputtered from a variety of elemental (Si, Ge, a‐C:H) and compound (GaAs, InP, InSb, ZnTe, ZnMnTe, ZnSe, CdS, CdSe, CdTe) semiconductors by Cs + ion impact was investigated. The energy spectra of MCs + species were found to be very similar to that of Cs + ions but, in most cases, are shifted slightly (∼1 eV) to higher energies. The useful yields of MCs + secondary ions range from 10 −6 (for HCs + ) to 10 −4 and, for a given molecular species, are largely independent of the specimen. For a series of Ge 1‐ x O x samples it was established that the GeCs + intensity is constant up to an oxygen content of ∼10 at.% but the emission of GeOCs + ions is prominent above this value and constitutes a competing ejection channel.