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Experimental study demonstrates room-temperature gate control of Schottky barrier heights in ferroelectric devices, highlighting pathways for low-power nanoelectronics.
We show that an applied backgate voltage in three-terminal ferroelectric Pt/ZrO 2 /Pt/doped Si/Al devices is able to tune the effective bias potential as well as the barrier height at the Pt/ZrO 2 interface. The electrically tunable Schottky barrier, due to the ferroelectric response of ZrO 2 , is observed at gate voltages as small as 1 µV, and produces a modulation of the drain current with four orders of magnitude at room temperature. These findings are supported by electrical measurements and AFM, XRD and XPS analyses.
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Dragoman et al. (2026) studied this question.
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