What does this research mean for the field?

Encapsulated bimodal Cu-sintered joints maintain stable mechanical bonding, suppress oxidation, and exhibit excellent thermal and electrical reliability under high-temperature aging and repeated power cycling, making them highly viable for wide-bandgap power modules. Novelty: ClaimNovelty.INCREMENTAL. Consensus alignment: ConsensusAlignment.NEUTRAL.

What question did this study set out to answer?

Evaluate the thermal reliability, bonding stability, and heat dissipation of bimodal copper-sintered joints within silicone-gel-encapsulated silicon carbide power modules.

September 2, 2026Journal of Welding and JoiningOpen Access

Thermal Reliability Evaluation of Cu-Sintered Joints in Encapsulated SiC Power Modules

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Authors

DYDong-Yurl Yu JSJunhyuk Son JBJunghwan Bang

Discussion

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Overview

Experimental analysis reveals robust joint stability in silicone-encapsulated copper-sintered silicon carbide power modules, indicating high durability for high-temperature applications.

Key Points

Evaluate the thermal reliability, bonding stability, and heat dissipation of bimodal copper-sintered joints within silicone-gel-encapsulated silicon carbide power modules.
Fabricated modules by bonding ENIG-finished SiC MOSFET chips to AlN AMB substrates using a bimodal Cu paste (1 μm and 0.3 μm particles at a 25:75 wt.% ratio) sintered at 250 ℃ and 10 MPa for 10 min.
Encapsulated the assemblies with silicone-gel and evaluated durability through high-temperature aging at 200 ℃ for up to 2,000 h alongside 20,000 power cycles.
Following 2,000 h of aging at 200 ℃, joint shear strength increased from 36.44 MPa to 41.08 MPa, electrical resistance dropped from 0.69 Ω to 0.58 Ω, and oxidation was limited to minor Cu2O without detectable CuO.
After 20,000 power cycles, thermal resistance rose marginally by approximately 2.0% (from 0.791 K/W to 0.807 K/W), with zero interfacial delamination or through-thickness cracking observed.

Cite This Study

Yu et al. (2026) studied this question.

synapsesocial.com/papers/6a97e2c5c562ede874ec70f7 https://doi.org/10.5781/jwj.2026.44.4.3

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September 2, 2026Journal of Welding and JoiningOpen Access

Thermal Reliability Evaluation of Cu-Sintered Joints in Encapsulated SiC Power Modules

View Full Paper

Ask AI

Bookmark

Authors

DYDong-Yurl Yu JSJunhyuk Son JBJunghwan Bang

Discussion

Member takes

Overview

Experimental analysis reveals robust joint stability in silicone-encapsulated copper-sintered silicon carbide power modules, indicating high durability for high-temperature applications.

Key Points

Evaluate the thermal reliability, bonding stability, and heat dissipation of bimodal copper-sintered joints within silicone-gel-encapsulated silicon carbide power modules.
Fabricated modules by bonding ENIG-finished SiC MOSFET chips to AlN AMB substrates using a bimodal Cu paste (1 μm and 0.3 μm particles at a 25:75 wt.% ratio) sintered at 250 ℃ and 10 MPa for 10 min.
Encapsulated the assemblies with silicone-gel and evaluated durability through high-temperature aging at 200 ℃ for up to 2,000 h alongside 20,000 power cycles.
Following 2,000 h of aging at 200 ℃, joint shear strength increased from 36.44 MPa to 41.08 MPa, electrical resistance dropped from 0.69 Ω to 0.58 Ω, and oxidation was limited to minor Cu2O without detectable CuO.
After 20,000 power cycles, thermal resistance rose marginally by approximately 2.0% (from 0.791 K/W to 0.807 K/W), with zero interfacial delamination or through-thickness cracking observed.

Cite This Study

Yu et al. (2026) studied this question.

synapsesocial.com/papers/6a97e2c5c562ede874ec70f7 https://doi.org/10.5781/jwj.2026.44.4.3

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