Fast phase transition processes on Ge2Sb2Te5 film induced by picosecond laser pulses were studied using time-resolved reflectivity measurements. It was found that after picosecond laser pulse priming, reversible switching could be occurred upon picosecond laser pulse irradiation with the same well-chosen fluence. This is very different from general knowledge that reversible phase change process will be induced by laser pulses with different powers; that is, amorphization process needs much higher fluence than crystallization process. The possible mechanism was discussed qualitatively by a melting-cooling model.
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Huang et al. (2009) studied this question.
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