Size- and Phase-Controlled Nanometer-Thick β-Ga2O3 Films with Green Photoluminescence for Optoelectronic Applications

Realization and optimization of the tunable/enhanced optical properties are critical to further advancing the fields of optoelectronics, photonics, and nanoelectronics. In this context, here, we demonstrate green-emission characteristics with a ∼30-fold enhancement in selectively engineered nanocrystalline Ga 2 O 3 with control over the size, phase, and interface nanostructure. Pulsed-laser-deposited β-phase Ga 2 O 3 films with an average crystallite size of ∼9 nm along with a highly dense, close-compact nanocolumnar structure with the lowest possible defect density facilitate the 30-fold enhancement in the photoluminescence (PL) intensity in the green region. Enhanced PL emission in the optimized, engineered nanoarchitecture sheds light on the design of Ga 2 O 3 materials for promising future optoelectronic/photocatalytic applications.