We present a 2-mm diameter, 35-μm-thick disk resonator gyro (DRG) fabricated insilicon with integrated 0.35-μm CMOS analog front-end circuits. The device is fabricated in the commercial InvenSense Fabrication MEMS-CMOS integrated platform, which incorporates a wafer-level vacuum seal, yielding a quality factor (Q) of 2800 at the DRGs 78-kHz resonant frequency. After performing electrostatic tuning to enable mode-matched operation, this DRG achieves a55~μV/°/s sensitivity. Resonator vibration in the sense and drive axes is sensed using capacitive transduction, and amplified using a low-noise, on-chip integrated circuit. This allows the DRG to achieve Brownian noise-limited performance. The angle random walk is measured to be 0.008°/s/Hz and the bias instability is 20°/h.
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Su et al. (2014) studied this question.
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