Enhanced acceptor activation is achieved in the ternary nitride semiconductor ZnSnN2. Hydrogen passivation of acceptors during growth, coupled with post-growth annealing to remove hydrogen, suppresses native donor formation and moves the Fermi energy away from the conduction band minimum. This technique produces nondegenerate zinc tin nitride with 1016 cm−3 electron concentration.
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Fioretti et al. (2017) studied this question.
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