Experimental results show that the free carrier mobility in AlGaN/GaN quantum wells strongly decreases with the carrier density. Using the dynamical theory, we show that this behaviour can be explained by a combination of phonon, carrier–carrier and interface defect scattering mechanisms.
No takes yet. Share an insight, caveat, or question.
Farvacque et al. (2002) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: