Modeling of Reaction Pathways of GaN Growth by Metalorganic Vapor-Phase Epitaxy Using TMGa/NH3/H2 System: A Computational Fluid Dynamics Simulation Study

A model of reaction pathways of GaN growth by metalorganic vapor-phase epitaxy was studied by computational fluid dynamics simulations. We included the formation of polymers such as [Ga–N] n and [MMGaNH] n (n=2–6) in the reaction model in a TMGa/NH3/H2 system for the first time. The simulations using this reaction modeling successfully explained experimental growth rates at various temperatures, and clarified the main reaction pathway of GaN growth. The change in gas-phase chemistry due to temperature in the range of 300–1400 K was investigated. It was found that the type of reactive molecule changes with temperature, followed by the formation of different polymers in a certain temperature range, that is, [MMGaNH] n at 600–750 K and [Ga–N] n at higher temperatures.