An all-dielectric transverse electric (TE)-/transverse magnetic (TM)-pass polarizer based on silicon-on-insulator (SoI) is proposed and analyzed. The symmetric etching of the silicon nanowire with specific values allows the cutoff of the undesired polarization state while the other is propagated with minimal losses. The proposed SoI polarizer can achieve 26- and 30-dB extinction ratios and 0.4-dB insertion losses for both TE- and TM-pass polarizers, respectively, with a very compact device length as short as 2.5 μm. The polarizer maintains20-dB extinction ratio over a wide wavelength range of 1.454-1.68 μm. Fabrication of the introduced device is compatible with standard CMOS fabrication process.
No takes yet. Share an insight, caveat, or question.
Azzam et al. (2014) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: