We reported a facile route to fabricate a tin dioxide (SnO 2 )-based light-emitting diode (LED) and obtain an electrically pumped band-edge ultraviolet (UV) emission. We first investigated the photoluminescence (PL) properties of the SnO 2 thin films deposited on quartz substrates annealed at various temperatures. It was found that SnO 2 nanocrystals were embedded in the SnO 2 amorphous matrix after annealing at 400 °C to form a SnO 2 nanoparticle/amorphous hybrid film; the band-edge UV emission was observed from the hybrid film due to the hybrid structure breaking the dipole-forbidden rule of bulk SnO 2 . This hybrid SnO 2 film was then deposited on a p-type GaN substrate to form a SnO 2 hybrid film-based LED and a band-edge UV electroluminescence (EL) was observed. Our results suggest that this easy and effective approach may find extensive application in the field of optoelectronics, displays and solid-state lighting.
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Huang et al. (2015) studied this question.
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