What question did this study set out to answer?

To accurately model and parameterize current-voltage-temperature (I-V-T) characteristics across a wide thermal range in nickel-silicon carbide Schottky diodes exhibiting interface inhomogeneity.

December 9, 2013Journal of Applied PhysicsOpen Access

Modelling the inhomogeneous SiC Schottky interface

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To accurately model and parameterize current-voltage-temperature (I-V-T) characteristics across a wide thermal range in nickel-silicon carbide Schottky diodes exhibiting interface inhomogeneity.
Characterized nickel/silicon carbide (Ni/SiC) Schottky diodes across cryogenic and room temperatures from 20 K to 320 K at 2 K intervals.
Applied two analytical models based on Tung's interactive parallel conduction framework to simulate barrier height inhomogeneity, patch pinch-off, and patch-specific resistance.
Observed near-ideal ideality factors at room temperature (n < 1.01) but pronounced anomalies at cryogenic temperatures (n > 8) accompanied by thermionic field emission signatures.
Demonstrated that a patch pinch-off model effectively fits data above ~150 K at current densities below 10⁻⁵ A cm⁻², whereas adding patch resistance accurately fits the entire 20 to 320 K temperature range.
Identified reduced physical confidence in fitting parameter interpretations above 230 K, while confirming both modeling frameworks successfully reproduce multi-temperature I-V-T traces.

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Implication

Experimental modeling reveals barrier inhomogeneities and patch resistance govern cryogenic transport in nickel-silicon carbide Schottky diodes, highlighting non-ideal conduction mechanisms.

Cite This Study

Gammon et al. (2013) studied this question.

synapsesocial.com/papers/6a9818f2827cb52371a68978 https://doi.org/10.1063/1.4842096

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Implication

Experimental modeling reveals barrier inhomogeneities and patch resistance govern cryogenic transport in nickel-silicon carbide Schottky diodes, highlighting non-ideal conduction mechanisms.

Modelling the inhomogeneous SiC Schottky interface

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Discussion

Implication

Cite This Study

Modelling the inhomogeneous SiC Schottky interface

Key Points

Discussion

Implication

Cite This Study

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