A theory is developed and compared with experiment for the growth and etching of silicon in H 2 , SiCl 4 and/or HC 1 mixtures. The horizontal reactor used is operated, as is usual for commercial reactors, under conditions such that the processes are mass‐transport controlled. Good agreement between theory and experiment is found if it is assumed that mass transport occurs predominantly by diffusion.
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W.H. Shepherd (1965) studied this question.
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