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We have compared the data retention of irradiated commercial NAND flash memories with that of unirradiated controls. For parts aged by baking at high temperature, there was a statistically significant difference between irradiated samples and unirradiated controls. For parts aged by repetitive Program/Erase (P/E) cycling, the effect of radiation was not statistically significant.
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Oldham et al. (2011) studied this question.
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