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A theory of noise due to carrier generation in the space charge region of one-sided abrupt junctions with exponentially graded generation rate is presented. Assuming that the generation rate is expressed as C 0 exp (-x/a) and the noise spectrum as S(ω)=2q IΓ2, we find that the noise reduction factor Γ2 lies between 0.68 and 1, depending upon the ratio of the characteristic length, a, to the width of the space charge region.
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Sasaki et al. (1991) studied this question.
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