Cd‐free InP / ZnSeS quantum dots for ultrahigh‐resolution imaging of stimulated emission depletion

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Stimulated emission depletion (STED) nanoscopy is a promising super‐resolution imaging technique for microstructure imaging; however, the performance of super‐resolution techniques critically depends on the properties of the fluorophores (photostable fluorophores) used. In this study, a suitable probe for improving the resolution of STED nanoscopy was investigated. Quantum dots (QDs) typically exhibit good photobleaching resistance characteristics. In comparison with CdSe@ZnS QDs and CsPbBr3QDs, Cd‐free InP/ZnSeS QDs have a smaller size and exhibit an improved photobleaching resistance. Through imaging using InP/ZnSeS QDs, we achieved an ultrahigh resolution of 26.1 nm. Furthermore, we achieved a 31 nm resolution in cell experiments involving InP/ZnSeS QDs. These results indicate that Cd‐free InP/ZnSeS QDs have significant potential for application in fluorescent probes for STED nanoscopy.