Deep levels due to titanium were identified for the first time in InP and GaAs employing capacitance transients and optical absorption measurements. They were found to be Ti4+/Ti3+ donor levels at energies of 0.63±0.03 eV and 1.00±0.03 eV in InP and GaAs, respectively. The near midgap location of this donor level in InP is technologically very significant, since it provides a new means for obtaining semi-insulating InP with a resistivity of about 107 Ω cm. The thermal stability of Ti-doped InP should be superior to that of Fe-doped InP. A formulation involving the Ti dopant and shallow acceptor impurities for obtaining semi-insulating InP from the melt is presented.
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Brandt et al. (1986) studied this question.
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