The near-infrared optical-absorption, luminescence, and luminescence-excitation spectra of liquid-encapsulation Czochralski-grown, vanadium- (V) doped GaP and GaAs have been investigated. The behavior of the characteristic V emission has been studied in magnetic fields up to 5.3 T. An analysis of the data within the framework of crystal-field theory indicates that the V-induced optical bands arise from crystal-field transitions within nonassociated V²⁺3d³ ions in the strong-field (low-spin) case. The electron-spinresonance spectrum of semi-insulating GaAs:V contains a characteristic signal which is identified as isolated V³⁺3d². The characteristics of this signal show that V can act as a deep acceptor. The distribution coefficient of V in GaAs is close to that of Cr in GaAs.
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Kaufmann et al. (1982) studied this question.
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