Temperature dependence of intra-4f-shell photo- and electroluminescence spectra for erbium-doped GaAs

Temperature dependencies of linewidth and peak wavelength are studied for the intra-4f-shell photoluminescence and electroluminescence spectra of erbium ions incorporated in GaAs by metalorganic chemical vapor deposition. For both the photo- and electroluminescence spectra, the magnitudes of the linewidth broadening rate (3×10−2 cm−1 /deg) and the peak wavelength shift rate (5×10−3 cm−1 /deg) are comparable to those of rare-earth ions in insulators, such as Nd-doped yttrium aluminum garnet. They are about two orders of magnitude smaller than those for the luminescence line due to band-to-band transition of a typical semiconductor (InGaAs) at the same wavelength region.