Answers are grounded in this paper and cite their sources.
Erbium impurities were implanted in binary, ternary and quaternary III–V semiconductors. The main erbium emission centered at 1.54 µm is an invariant for III–V semiconductors having a band gap energy higher than the intrashell transition energy of Er 4f electrons (0.805 eV). The erbium emission is independent of the emission temperature from 2 K to 300 K.
No takes yet. Share an insight, caveat, or question.
Rochaix et al. (1988) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: