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This paper presents the performance characteristics of InP-based p-i-n photodiodes with strain-compensated and lattice-matched InGaAs/GaAsSb type-II multiple quantum well (MQW) absorption regions. The results show that photodiodes with strain-compensated and lattice-matched absorption regions have optical response out to 3.4 and 2.8μ mwith dark current densities of 9.7 and 1.66mA~ cm⁻², respectively, at 290 K under- 0.5~ Vreverse bias. The carrier transport mechanism responsible for the difference in responsivity and detectivity between strain-compensated and lattice-matched InGaAs/GaAsSb MQWs is discussed.
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Chen et al. (2011) studied this question.
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