Radiation stability of an InGaZnO thin-film transistor in heavy ion radiotherapy

C -axis-aligned crystalline In–Ga–Zn–O (CAAC-IGZO) thin-film transistors (TFTs) have received a great deal of interest for large-area devices owing to their low off-state leak current characteristics and their structural stability as a result of its crystallinity, compared to conventional amorphous TFTs. Here, we report the radiation effects of CAAC-IGZO TFTs in a 12 C 6 + beam irradiation environment, and we discuss prospects for the use of CAAC-IGZO TFTs in heavy-ion radiotherapy. The performance characteristics were investigated by controlling the electrical and size properties in the gate insulator, and the results showed a threshold voltage shift of −1 V and a sub-threshold swing degradation of around 250 mV dec -1 after 130 krad dose irradiation.