Nucleation rate and glide velocity of misfit dislocations in Si1−xGex/(100) Si heterostructures

Expressions are presented for the rate of strain relaxation, misfit dislocation nucleation, and propagation in strained Si1−xGex/(100)Si heterostructures. Independent measurements of misfit dislocation nucleation and 60° type a/2 〈110〉 dislocation glide velocity in the temperature range 450–1000 °C have led to a model which characterizes the kinetics of strain relaxation for 0