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One task of the integration of optoelectronic functions with silicon devices is the construction of an optical waveguide on Si and the optical coupling of this waveguide to a silicon photodetector. We have fabricated polymeric strip waveguides on Si and demonstrate a very efficient design for the optical coupling between the polymeric waveguide and an ultrafast Si-based metal-semiconductor-metal (MSM) mesa-type photodetector. This detector uses high-quality epitaxial Si as the sensitive layer, which is sandwiched between two metallic contacts. If these MSM detectors are excited by a vertically incident free beam of /spl lambda/=840 nm and pulses of 100-fs full-width at half-maximum (FWHM), they respond with electrical pulses of 3, 5-ps length (FWHM, T=300 K).
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Siegert et al. (1998) studied this question.
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