Three-Valued Single-Electron Memory Array with Reading Circuits

We first demonstrate a method of realizing a multiple-valued single-electron memory device based on Monte Carlo simulation results. Using the simulation method, we demonstrate that with a memory array constructed with memory cells, each of which has a junction-capacitor-junction single-electron memory device and a reading circuit, three logical values “-1", “0", and “1" can be written, held and read, and that the memory array successfully functions as a three-valued memory array. Since the results of a logical summation of input and stored data can be stored in the cell, the memory array functions as a novel functional memory.