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Compositional disordering in Si implanted GaAs/AlGaAs superlattices has been studied for various implantation energies by secondary ion mass spectrometry. It is found that at higher energy implantation the disordering is suppressed in the surface region and that the disordering in the deeper region becomes incomplete with the implantation energy. These results are well explained by the formation of damage in the surface region and the reduction of Si concentration, respectively.
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Matsui et al. (1986) studied this question.
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