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Interfacial compositional disordering in In0.6Ga0.4As/GaAs quantum dots has been used to tune their intersublevel energy spacings (ΔE_[(i+1)-i]). Interdiffusion blueshifted all levels while lowering values for ΔE_[(i+1)-i]. Rate equation simulations of photoluminescence (PL) spectra estimated relaxation lifetime ratios for intersublevel transitions. A slight trend towards increasing thermalization rates at values ΔE_[(i+1)-i]~LO phonon energies was found. However, PL measurements showed strong emission from excited states for all ΔE_[(i+1)-i] values, which ranged from 53 to 25 meV.
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León et al. (1998) studied this question.
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