Control of plasma parameters and wall sheath voltage in radio frequency magnetron discharge by grid bias

The plasma of a radio frequency (rf) magnetron discharge used for deposition of TiOx thin films was separated by a mesh grid into source (negative glow) and diffusion (deposition) plasmas. Langmuir probes were used to measure the potential, electron density, and electron temperature of both plasmas. While the change of the grid bias affected the diffusion plasma parameters, it did not change the source plasma parameters (except the potential). The use of the biased grid resulted in a decrease of temperature and an increase of density of plasma electrons in the film deposition region. With an increase of the grid biasing potential, the plasma potential increased in order to maintain a negative bias voltage across the grid sheath, the electron temperature increased, and the electron density decreased. The biased-grid-induced change of the plasma potential and the bias voltage across the wall sheath is explained based on the model of the asymmetric double probe, which is formed by the discharge chamber wall and the grid. The effect of the biased grid on the diffusion plasma parameters is discussed accounting for the particle transport phenomena in the system.