Molecular layer epitaxy is a crystal growth method using chemical reactions of adsorbates on semiconductor surfaces and is able to control the thickness of epitaxial films in the order of atomic accuracy. In this paper, we report on a study of monomolecular layer growth mechanisms. MLE was demonstrated in and systems. Monomolecular layer growth for the (100) face was realized at 500° and 320°C in the and systems, respectively. It was also studied for the (111) B face in both systems. In the system, the film thickness per cycle did not depend on and pressure, gas injection mode, and wafer misorientation. It is suggested that MLE growth is dominated by the adsorption of Ga‐complex bonding with the dangling bonds of surface arsenic atoms. The deviation from this model at the high temperature region was also studied. The difference in the film thickness per cycle was studied among various faces of the substrates. Surface migration species was also clarified for the first time.
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Nishizawa et al. (1987) studied this question.